摘要
The design of multiband microstrip rectenna for radio frequency energy harvesting applications is presented in this paper. The designed antenna has good performance in the GSM-900/1800, WiFi and WLAN bands. In addition, the rectifier circuit is designed at multi resonant frequencies to collect the largest amount of RF ambient power from different RF sources. The developed antenna is matched with the rectifier at four desired frequencies using several rectifier branches to collect the largest of RF power. The proposed rectenna is printed on FR4 substrate with modified ground plane to achieve suitable impedance bandwidth. The proposed antenna consists of elliptical radiating plane with stubs and stepped modified ground plane. The rectenna resonates at quad frequency bands at (GSM 900/1800, WiFi band and WLAN bands) with rectifier power conversion efficiency up to 56.4% at 0 dBm input power using the HSMS-2850 Schottky diode. The efficiency is more enhanced by using SMS-7630-061 Schottky diode which is characterized by a low junction capacitance and a low threshold voltage to achieve higher conversion efficiency up to 71.1% at the same 0 dBm input power for the same resonating frequency band.
The design of multiband microstrip rectenna for radio frequency energy harvesting applications is presented in this paper. The designed antenna has good performance in the GSM-900/1800, WiFi and WLAN bands. In addition, the rectifier circuit is designed at multi resonant frequencies to collect the largest amount of RF ambient power from different RF sources. The developed antenna is matched with the rectifier at four desired frequencies using several rectifier branches to collect the largest of RF power. The proposed rectenna is printed on FR4 substrate with modified ground plane to achieve suitable impedance bandwidth. The proposed antenna consists of elliptical radiating plane with stubs and stepped modified ground plane. The rectenna resonates at quad frequency bands at (GSM 900/1800, WiFi band and WLAN bands) with rectifier power conversion efficiency up to 56.4% at 0 dBm input power using the HSMS-2850 Schottky diode. The efficiency is more enhanced by using SMS-7630-061 Schottky diode which is characterized by a low junction capacitance and a low threshold voltage to achieve higher conversion efficiency up to 71.1% at the same 0 dBm input power for the same resonating frequency band.
