摘要
Excess minority carrier’s diffusion equation in the base of monofaciale silicon solar cell under frequency modulation of monochromatic illumination is resolved. Using conditions at the base limits involving recombination velocities <i>Sf</i> and <i>Sb</i>, respectively at the junction (n<sup>+</sup>/p) and back surface (p<sup>+</sup>/p), the AC expression of the excess minority carriers’ density <i>δ</i> (<i>T</i>, <i>ω</i>) is determined. The AC density of photocurrent <i>J<sub>ph</sub></i> (<i>T</i>, <i>ω</i>) is represented versus recombination velocity at the junction for different values of the temperature. The expression of the AC back surface recombination velocity <i>Sb</i> of minority carriers is deduced depending on the frequency of modulation, temperature, the electronic parameters (<i>D</i> (<i>ω</i>)) and the thickness of the base. Bode and Nyquist diagrams are used to analyze it.
Excess minority carrier’s diffusion equation in the base of monofaciale silicon solar cell under frequency modulation of monochromatic illumination is resolved. Using conditions at the base limits involving recombination velocities <i>Sf</i> and <i>Sb</i>, respectively at the junction (n<sup>+</sup>/p) and back surface (p<sup>+</sup>/p), the AC expression of the excess minority carriers’ density <i>δ</i> (<i>T</i>, <i>ω</i>) is determined. The AC density of photocurrent <i>J<sub>ph</sub></i> (<i>T</i>, <i>ω</i>) is represented versus recombination velocity at the junction for different values of the temperature. The expression of the AC back surface recombination velocity <i>Sb</i> of minority carriers is deduced depending on the frequency of modulation, temperature, the electronic parameters (<i>D</i> (<i>ω</i>)) and the thickness of the base. Bode and Nyquist diagrams are used to analyze it.
作者
Mame Faty Mbaye Fall
Idrissa Gaye
Dianguina Diarisso
Gora Diop
Khady Loum
Nafy Diop
Khalidou Mamadou Sy
Mor Ndiaye
Gregoire Sissoko
Mame Faty Mbaye Fall;Idrissa Gaye;Dianguina Diarisso;Gora Diop;Khady Loum;Nafy Diop;Khalidou Mamadou Sy;Mor Ndiaye;Gregoire Sissoko(Ecole Polytechnique de Thiès, Thiès, Sénégal;Institute of Technology, University of Thiès, Thiès, Sénégal;Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal)
