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A Review of the Study on the Electromigration and Power Electronics

A Review of the Study on the Electromigration and Power Electronics
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摘要 Electromigration is a main challenge in the pursuit of power electronics, because physical limit to increase current density in power electronics is electromigration (EM), whereas much higher electrical current and voltage are required for power electronics packaging. So the effect of EM is an important issue in applications where high current densities are used, such as in microelectronics and related structures (e.g., Power ICs). Since the structure size of integrated circuits (ICs) decreases and the practical significance of this effect increases, the result is EM failure. On the other hand, in the next generation power electronics technology electrical current density is expected to exceed 10<sup>7</sup> A/cm<sup>2</sup> which is another challenge. This review work has been carried out to identify the mechanism of EM damage in power electronics (e.g., pure metallization and solder joints) and also how to control this kind of damage. Electromigration is a main challenge in the pursuit of power electronics, because physical limit to increase current density in power electronics is electromigration (EM), whereas much higher electrical current and voltage are required for power electronics packaging. So the effect of EM is an important issue in applications where high current densities are used, such as in microelectronics and related structures (e.g., Power ICs). Since the structure size of integrated circuits (ICs) decreases and the practical significance of this effect increases, the result is EM failure. On the other hand, in the next generation power electronics technology electrical current density is expected to exceed 10<sup>7</sup> A/cm<sup>2</sup> which is another challenge. This review work has been carried out to identify the mechanism of EM damage in power electronics (e.g., pure metallization and solder joints) and also how to control this kind of damage.
作者 Md. Khalilur Rahman Abul Monsur Mohammed Musa Budrun Neher Kawchar Ahmed Patwary Mohammad Atiqur Rahman Md. Shariful Islam Md. Khalilur Rahman;Abul Monsur Mohammed Musa;Budrun Neher;Kawchar Ahmed Patwary;Mohammad Atiqur Rahman;Md. Shariful Islam(Department of Physics, Comilla University, Comilla, Bangladesh;Department of Physics, University of Chittagong, Chittagong, Bangladesh;Department of Chemistry, Comilla University, Comilla, Bangladesh;Department of ICT, Comilla University, Comilla, Bangladesh)
出处 《Journal of Electronics Cooling and Thermal Control》 2016年第1期19-31,共13页 电子器件冷却与温度控制期刊(英文)
关键词 Voids and Hillocks INTERCONNECT Solder Joint Thermomigration MTF Reliability of IC Voids and Hillocks Interconnect Solder Joint Thermomigration MTF Reliability of IC
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