摘要
In this work, studied electrical conductivity(s) and annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV and doses of 1017 el/cm2 (centimeter) and 2 × 1017 el/cm2 (centimeter). It is shown that alongside point defects (in the form of complexes with impurity atoms in crystals of n-InP) also form the complex defects of the type of disordered areas, annealing of which proceeds at T > 300°C that binds accumulating radiation defects.
In this work, studied electrical conductivity(s) and annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV and doses of 1017 el/cm2 (centimeter) and 2 × 1017 el/cm2 (centimeter). It is shown that alongside point defects (in the form of complexes with impurity atoms in crystals of n-InP) also form the complex defects of the type of disordered areas, annealing of which proceeds at T > 300°C that binds accumulating radiation defects.
