摘要
In this paper the physical characteristics of FINFET (fin-field effect transistor) transistor behavior are investigated. For the analysis, semi-classical electron transfer method was used based on drift diffusion approximation by TCAD (Tiber CAD) software. Simulations show that the output resistance of FINFET along very small gate (gate length and fin height of 50 nm) is negative. The negative resistance is used in oscillators.
In this paper the physical characteristics of FINFET (fin-field effect transistor) transistor behavior are investigated. For the analysis, semi-classical electron transfer method was used based on drift diffusion approximation by TCAD (Tiber CAD) software. Simulations show that the output resistance of FINFET along very small gate (gate length and fin height of 50 nm) is negative. The negative resistance is used in oscillators.
