摘要
Deep level transient spectroscopy (temperature scans) of AlGaInP based red light emitting diodes was carried out from 77 K to room temperature. At least ten defects were observed. Of these, five defects assigned to energy states 0.21, 0.22, 0.24, 0.26, and 0.24 eV were characterized. Respective capture cross-sections, measured at infinite temperature (T = ∞), QUOTE were found to be 8.84 × 10-16, 6.98 × 10-16, 7.86 × 10-16, 9.9 × 10-16 and 2.1 × 10-16 cm2. Corresponding concentrations of defects were 3.7 × 1013, 3.5 × 1013, 3.2 × 1013, 3.3 × 1013 and 3.1 × 1013 cm-3.
Deep level transient spectroscopy (temperature scans) of AlGaInP based red light emitting diodes was carried out from 77 K to room temperature. At least ten defects were observed. Of these, five defects assigned to energy states 0.21, 0.22, 0.24, 0.26, and 0.24 eV were characterized. Respective capture cross-sections, measured at infinite temperature (T = ∞), QUOTE were found to be 8.84 × 10-16, 6.98 × 10-16, 7.86 × 10-16, 9.9 × 10-16 and 2.1 × 10-16 cm2. Corresponding concentrations of defects were 3.7 × 1013, 3.5 × 1013, 3.2 × 1013, 3.3 × 1013 and 3.1 × 1013 cm-3.
