摘要
We have investigated the Fractional Quantum Hall Effect (FQHE) on the fundamental Hamiltonian with the Coulomb interactions between normal electrons without any quasi particle. The electron pairs placed in the Landau orbitals can transfer to many empty orbitals. The number of the quantum transitions decreases discontinuously when the filling factor v deviates from the specific fractional number of v0. The discontinuous decreasing produces the energy valley at the specific filling factors v0 = 2/3, 4/5, 3/5, 4/7, 3/7, 2/5, 1/3 and so on. The diagonal elements of the total Hamiltonian and the number of the quantum transitions give the total energy of the FQH states. The energy per electron has the discontinuous spectrum depending on the filling factor v. We obtain the function form of the energy per electron in the quantum Hall system. Then the theoretical Hall resistance curve is calculated near several filling factors. Therein the quantum Hall plateaus are derived from the energy valleys. The depths of the energy valleys are compared with the widths of the quantum Hall plateaus appearing in the experimental data of the Hall resistance. Our theoretical results are in good agreement with the experimental results.
We have investigated the Fractional Quantum Hall Effect (FQHE) on the fundamental Hamiltonian with the Coulomb interactions between normal electrons without any quasi particle. The electron pairs placed in the Landau orbitals can transfer to many empty orbitals. The number of the quantum transitions decreases discontinuously when the filling factor v deviates from the specific fractional number of v0. The discontinuous decreasing produces the energy valley at the specific filling factors v0 = 2/3, 4/5, 3/5, 4/7, 3/7, 2/5, 1/3 and so on. The diagonal elements of the total Hamiltonian and the number of the quantum transitions give the total energy of the FQH states. The energy per electron has the discontinuous spectrum depending on the filling factor v. We obtain the function form of the energy per electron in the quantum Hall system. Then the theoretical Hall resistance curve is calculated near several filling factors. Therein the quantum Hall plateaus are derived from the energy valleys. The depths of the energy valleys are compared with the widths of the quantum Hall plateaus appearing in the experimental data of the Hall resistance. Our theoretical results are in good agreement with the experimental results.
