摘要
Theoretical investigation of generation-recombination processes in silicon, which has a lifetime of charge carriers 10-3 s and capture cross sections of 10-16 sm2. For the study uses a method of phase portraits, which are widely used in the theory of vibrations. It is shown that the form of phase portraits strongly depends on the frequency of exposure to the external variable deformation.
Theoretical investigation of generation-recombination processes in silicon, which has a lifetime of charge carriers 10-3 s and capture cross sections of 10-16 sm2. For the study uses a method of phase portraits, which are widely used in the theory of vibrations. It is shown that the form of phase portraits strongly depends on the frequency of exposure to the external variable deformation.
