摘要
Hydrogenated amorphous carbon nitride (a-CN<sub>x</sub>:H) films were formed on Al films deposited on Si or glass (SiO<sub>2</sub>) substrates, using pulsed radio frequency (PRF) supermagnetron plasma (SMP) chemical vapor deposition (CVD) with N<sub>2</sub>/i-C<sub>4</sub>H<sub>10</sub> mixed gases. a-CN<sub>x</sub>:H films were grown under the upper and lower electrode RF powers (13.56 MHz) of continuous and pulsed conditions, respectively, which showed low band gap of about 0.7 eV. a-CN<sub>x</sub>:H films deposited on the Al/Si or Al/SiO<sub>2</sub> substrates showed same low threshold emission electric field (ETH) of 12 V/μm. Multiple layer of Al or ITO (anode)/50nm-SiO<sub>2</sub>/a-CN<sub>x</sub>:H/Al (cathode)/Si structures showed Fowler-Nordheim (FN) electron tunneling effect in both forward and reverse current directions. 12.5 nm a-CN<sub>x</sub>:H film on p-Si substrate showed a photoelectric conversion. Energy band structure and electron conduction models were proposed for the active states of both the field emission and FN tunneling devices and photovoltaic cells.
Hydrogenated amorphous carbon nitride (a-CN<sub>x</sub>:H) films were formed on Al films deposited on Si or glass (SiO<sub>2</sub>) substrates, using pulsed radio frequency (PRF) supermagnetron plasma (SMP) chemical vapor deposition (CVD) with N<sub>2</sub>/i-C<sub>4</sub>H<sub>10</sub> mixed gases. a-CN<sub>x</sub>:H films were grown under the upper and lower electrode RF powers (13.56 MHz) of continuous and pulsed conditions, respectively, which showed low band gap of about 0.7 eV. a-CN<sub>x</sub>:H films deposited on the Al/Si or Al/SiO<sub>2</sub> substrates showed same low threshold emission electric field (ETH) of 12 V/μm. Multiple layer of Al or ITO (anode)/50nm-SiO<sub>2</sub>/a-CN<sub>x</sub>:H/Al (cathode)/Si structures showed Fowler-Nordheim (FN) electron tunneling effect in both forward and reverse current directions. 12.5 nm a-CN<sub>x</sub>:H film on p-Si substrate showed a photoelectric conversion. Energy band structure and electron conduction models were proposed for the active states of both the field emission and FN tunneling devices and photovoltaic cells.
作者
Haruhisa Kinoshita
Haruhisa Kinoshita(Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, Hamamatsu, Japan)
