摘要
Thin films of Bismuth Telluride (Bi<sub>2</sub>Te<sub>3</sub>) are prepared by thermal evaporation from nanopowders on the glass substrates. The XRD patterns of films show that all the films are polycrystalline and the crystalline increased by annealing temperature. Measuring of the thermoelectric power of thin films in the temperature range 300 to 380 K shows that Seebeck Coefficients have both negative and positive values, indicating that the films have both n-type and p-type conductivity. The re-crystallization of films is done by annealing from 130°C to 175°C and Seebeck Coefficient varied from -150 to 100 μV/K.
Thin films of Bismuth Telluride (Bi<sub>2</sub>Te<sub>3</sub>) are prepared by thermal evaporation from nanopowders on the glass substrates. The XRD patterns of films show that all the films are polycrystalline and the crystalline increased by annealing temperature. Measuring of the thermoelectric power of thin films in the temperature range 300 to 380 K shows that Seebeck Coefficients have both negative and positive values, indicating that the films have both n-type and p-type conductivity. The re-crystallization of films is done by annealing from 130°C to 175°C and Seebeck Coefficient varied from -150 to 100 μV/K.
作者
Sayed Mohammad Elahi
Hana Nazari
Laya Dejam
Hamid Reza Gorji
Sayed Mohammad Elahi;Hana Nazari;Laya Dejam;Hamid Reza Gorji(Plasma Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran;Solid State Laboratory, Department of Physics, Razi University, Kermanshah, Iran;Chemical Engineering Group, Department of Engineering, Razi University, Kermanshah, Iran)
