期刊文献+

Base Doping Effects on the Efficiency of Vertical Parallel Junction Solar Cells 被引量:1

Base Doping Effects on the Efficiency of Vertical Parallel Junction Solar Cells
下载PDF
导出
摘要 In this work, we present a theoretical study of a vertical parallel junction silicon solar cell under monochromatic illumination. The internal quantum efficiency (IQE) and the photovoltaic conversion efficiency are calculated, taking into account the base doping density and illumination wave-length. The main purpose of this work is to show how conversion efficiency depends on internal quantum efficiency and the dependence of the later on the base doping density. In this work, we present a theoretical study of a vertical parallel junction silicon solar cell under monochromatic illumination. The internal quantum efficiency (IQE) and the photovoltaic conversion efficiency are calculated, taking into account the base doping density and illumination wave-length. The main purpose of this work is to show how conversion efficiency depends on internal quantum efficiency and the dependence of the later on the base doping density.
出处 《Open Journal of Applied Sciences》 2017年第6期282-290,共9页 应用科学(英文)
关键词 VERTICAL JUNCTION DOPING INTERNAL QUANTUM EFFICIENCY (IQE) Vertical Junction Doping Internal Quantum Efficiency (IQE)
  • 相关文献

同被引文献1

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部