摘要
A new design of an immunosensor for viral molecules based on the ISFET nanoscale structure has been proposed. Physical processes take place inimmunosensor are modeled. The effect of modulation of the surface potential of the interface between a semiconductor depleted layer (channel) and a dielectric during the interaction and immobilization of viral molecules was used. Analytical expression for the source-drain current of ISFET as a function of virus types and concentration is presented and analyzed. Dependency of the source-drain current vs. concentration of viruses is analyzed for the COVID-19 virus.
A new design of an immunosensor for viral molecules based on the ISFET nanoscale structure has been proposed. Physical processes take place inimmunosensor are modeled. The effect of modulation of the surface potential of the interface between a semiconductor depleted layer (channel) and a dielectric during the interaction and immobilization of viral molecules was used. Analytical expression for the source-drain current of ISFET as a function of virus types and concentration is presented and analyzed. Dependency of the source-drain current vs. concentration of viruses is analyzed for the COVID-19 virus.
