摘要
The nonlinear absorption properties of direct (GaN) and indirect (CdI2) band gap crystals have been studied by using an open aperture Z-scan technique under fundamental (1064 nm) and frequency doubled (532 nm) wavelength respectively with 10 ns or 60 ps pulse durations. Direct band gap crystal exhibits two and three photon absorption at all input irradiances. On the other hand, at low input irradiance the indirect band gap crystal exhibits saturable absorption (SA). At higher input irradiances two and three photon absorption becomes dominant. A monotonic increase of the nonlinear absorption coefficients with increasing laser pulse duration from 60 ps to 10 ns is observed for GaN and CdI2 crystals.
The nonlinear absorption properties of direct (GaN) and indirect (CdI2) band gap crystals have been studied by using an open aperture Z-scan technique under fundamental (1064 nm) and frequency doubled (532 nm) wavelength respectively with 10 ns or 60 ps pulse durations. Direct band gap crystal exhibits two and three photon absorption at all input irradiances. On the other hand, at low input irradiance the indirect band gap crystal exhibits saturable absorption (SA). At higher input irradiances two and three photon absorption becomes dominant. A monotonic increase of the nonlinear absorption coefficients with increasing laser pulse duration from 60 ps to 10 ns is observed for GaN and CdI2 crystals.
