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Investigation of Photonic Band Gap in Si-Based One-Dimensional Photonic Crystal

Investigation of Photonic Band Gap in Si-Based One-Dimensional Photonic Crystal
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摘要 A one-dimensional silicon based photonic crystal with nonlinear defect layers is examined. The linear and nonlinear optical properties are analyzed. The transmission spectrum was obtained by applying the optical transfer matrix formalism to the photonic crystal. The various transmittance peaks obtained with the defect layers are investigated. The nature of the transmittance peak is analyzed with the number of defect layers. A one-dimensional silicon based photonic crystal with nonlinear defect layers is examined. The linear and nonlinear optical properties are analyzed. The transmission spectrum was obtained by applying the optical transfer matrix formalism to the photonic crystal. The various transmittance peaks obtained with the defect layers are investigated. The nature of the transmittance peak is analyzed with the number of defect layers.
机构地区 Department of Physics
出处 《Optics and Photonics Journal》 2013年第8期365-368,共4页 光学与光子学期刊(英文)
关键词 PHOTONIC BAND GAP 1D PHOTONIC CRYSTAL SI-SIO2 TRANSMITTANCE Photonic Band Gap 1D Photonic Crystal Si-SiO2 Transmittance
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