摘要
In static regime with polychromatic illumination, using the expression of the solar cell capacitance to determine the silicon solar cell capacitance C<sub>0</sub>(T) in short-circuit, is the purpose of this article. The expression of the excess minority carries density δ(x) from the continuity equation. The expression of δ(x) is used to determine the photovoltage expression. The capacitance efficiency dependence on X<sub>cc</sub>(T) is studied. X<sub>cc</sub>(T) is the abscissa of the maximum of δ(x).
In static regime with polychromatic illumination, using the expression of the solar cell capacitance to determine the silicon solar cell capacitance C<sub>0</sub>(T) in short-circuit, is the purpose of this article. The expression of the excess minority carries density δ(x) from the continuity equation. The expression of δ(x) is used to determine the photovoltage expression. The capacitance efficiency dependence on X<sub>cc</sub>(T) is studied. X<sub>cc</sub>(T) is the abscissa of the maximum of δ(x).
