摘要
This study delves into the charge transfer mechanism of boron (B)-doped 3C-SiC through first-principles investigations. We explore the effects of B doping on the electronic properties of 3C-SiC, focusing on a 12.5% impurity concentration. Our comprehensive analysis encompasses structural properties, electronic band structures, and charge density distributions. The optimized lattice constant and band gap energy of 3C-SiC were found to be 4.373 Å and 1.36 eV respectively, which is in agreement with previous research (Bui, 2012;Muchiri et al., 2018). Our results show that B doping narrows the band gap, enhances electrical conductivity, and influences charge transfer interactions. The charge density analysis reveals substantial interactions between B dopants and surrounding carbon atoms. This work not only enhances our understanding of the material’s electronic properties, but also highlights the importance of charge density analysis for characterizing charge transfer mechanisms and their implications in the 3C-SiC semiconductors.
This study delves into the charge transfer mechanism of boron (B)-doped 3C-SiC through first-principles investigations. We explore the effects of B doping on the electronic properties of 3C-SiC, focusing on a 12.5% impurity concentration. Our comprehensive analysis encompasses structural properties, electronic band structures, and charge density distributions. The optimized lattice constant and band gap energy of 3C-SiC were found to be 4.373 Å and 1.36 eV respectively, which is in agreement with previous research (Bui, 2012;Muchiri et al., 2018). Our results show that B doping narrows the band gap, enhances electrical conductivity, and influences charge transfer interactions. The charge density analysis reveals substantial interactions between B dopants and surrounding carbon atoms. This work not only enhances our understanding of the material’s electronic properties, but also highlights the importance of charge density analysis for characterizing charge transfer mechanisms and their implications in the 3C-SiC semiconductors.
作者
Abdullahi Alkali Dauda
Muhammad Yusuf Onimisi
Adeyemi Joshua Owolabi
Hameed Adeneyi Lawal
Hassan Muhammad Gambo
Bashir Mohammed Aliyu
Surajo Bala
Muhammad Lamido Madugu
Muhammad Abdurrahman Nainna
Johnson Akinade Bamikole
Abdullahi Alkali Dauda;Muhammad Yusuf Onimisi;Adeyemi Joshua Owolabi;Hameed Adeneyi Lawal;Hassan Muhammad Gambo;Bashir Mohammed Aliyu;Surajo Bala;Muhammad Lamido Madugu;Muhammad Abdurrahman Nainna;Johnson Akinade Bamikole(Physics Department, Faculty of Science, Air Force Institute of Technology, Kaduna, Nigeria;Physics Department, Faculty of Science, Nigeria Defence Academy, Kaduna, Nigeria;Physics Department, Umaru Musa Yar’,adua University, Batagarawa, Nigeria;Physics Department, Faculty of Science, Gombe State University, Gombe, Nigeria;Physics Department, Federal University of Lafia, Lafia, Nigeria)