摘要
Increase of Tc in Al1−x(SiO2)x cermets with increasing x is caused by electron transfer from the Al grains to the SiO2 phase occupying surface states, expressed by Tc/Tc,max=1−γ⋅n2(*), where n is the electron density in the Al phase and γa characteristic parameter. Decrease of Tc in Pb-Cu-sandwiches is attributed to the electron transfer from the Cu film to the Pb film. γand Tc,maxin equation (*) stands for the influence of the electron-phonon interaction and n2for the influence of the electron-electron Coulomb repulsion on Tc. The result that equation (*) holds for both hole-doped cuprate high-temperature superconductivity (HTSC) and Al1−x(SiO2)x cermets is an important indication that common mechanisms underlie HTSC and classical superconductors. The difference between the two is that in HTSC, electron transfer occurs between different electronic bands, but in Al1−x(SiO2)x cermets between different phases.
Increase of Tc in Al1−x(SiO2)x cermets with increasing x is caused by electron transfer from the Al grains to the SiO2 phase occupying surface states, expressed by Tc/Tc,max=1−γ⋅n2(*), where n is the electron density in the Al phase and γa characteristic parameter. Decrease of Tc in Pb-Cu-sandwiches is attributed to the electron transfer from the Cu film to the Pb film. γand Tc,maxin equation (*) stands for the influence of the electron-phonon interaction and n2for the influence of the electron-electron Coulomb repulsion on Tc. The result that equation (*) holds for both hole-doped cuprate high-temperature superconductivity (HTSC) and Al1−x(SiO2)x cermets is an important indication that common mechanisms underlie HTSC and classical superconductors. The difference between the two is that in HTSC, electron transfer occurs between different electronic bands, but in Al1−x(SiO2)x cermets between different phases.
