摘要
Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/ Ti/SiO2/Si substrates to understand the mechanisms of phase transformations in these films. PZT films pyrolyzed at temperatures higher than 350℃ present a coexistence of pyrochlore and perovskite phases, while only perovskite phase is present in films pyrolyzed at temperatures lower than 300℃. For films where the pyrochlore and perovskite phase coexists the amount of pyrochlore phase decreases from top surface to the bottom film-electrode interface and the PZT structure near top surface are Ti-rich compositions while near the bottom film-electrode interface the compositions are Zr-rich. For pyrochlore-free PZT thin film, a small (100) orientation tendency near the film-electrode interface was observed.
Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/ Ti/SiO2/Si substrates to understand the mechanisms of phase transformations in these films. PZT films pyrolyzed at temperatures higher than 350℃ present a coexistence of pyrochlore and perovskite phases, while only perovskite phase is present in films pyrolyzed at temperatures lower than 300℃. For films where the pyrochlore and perovskite phase coexists the amount of pyrochlore phase decreases from top surface to the bottom film-electrode interface and the PZT structure near top surface are Ti-rich compositions while near the bottom film-electrode interface the compositions are Zr-rich. For pyrochlore-free PZT thin film, a small (100) orientation tendency near the film-electrode interface was observed.
