期刊文献+

Effect of Annealing Temperature on Structural, Optical and Electrical Properties of Pure CdS Thin Films Deposited by Spray Pyrolysis Technique

Effect of Annealing Temperature on Structural, Optical and Electrical Properties of Pure CdS Thin Films Deposited by Spray Pyrolysis Technique
下载PDF
导出
摘要 Effect of annealing temperature on the properties of CdS thin films are carried out in this work. Nanocrystalline cadmium sulphide (CdS) thin films were prepared using spray pyrolysis deposition (SPD) technique and the structural, optical and electrical properties were investigated for different annealing temperature (as deposited, 300, 400 & 500 C). The surface morphology and compositional properties studied by SEM and EDX respectively. The crystal structure of CdS thin film was studied by X-ray diffraction. The crystallite size and lattice constant of SPD CdS thin films were investigated. The optical parameters such as transmittance, absorption coefficient and energy band gap of the films with thermal annealing temperature was investigated by UV/VIS spectrophotometer. The variation of band gap values of CdS thin film samples were found to be in the range of 2.51 to 2.8 eV. Electrical resistivity measurements were carried out in fourprobe Vander Pauw method at different temperature. So CdS films may be a good candidate for suitable application in various optoelectronic devices. Effect of annealing temperature on the properties of CdS thin films are carried out in this work. Nanocrystalline cadmium sulphide (CdS) thin films were prepared using spray pyrolysis deposition (SPD) technique and the structural, optical and electrical properties were investigated for different annealing temperature (as deposited, 300, 400 & 500 C). The surface morphology and compositional properties studied by SEM and EDX respectively. The crystal structure of CdS thin film was studied by X-ray diffraction. The crystallite size and lattice constant of SPD CdS thin films were investigated. The optical parameters such as transmittance, absorption coefficient and energy band gap of the films with thermal annealing temperature was investigated by UV/VIS spectrophotometer. The variation of band gap values of CdS thin film samples were found to be in the range of 2.51 to 2.8 eV. Electrical resistivity measurements were carried out in fourprobe Vander Pauw method at different temperature. So CdS films may be a good candidate for suitable application in various optoelectronic devices.
出处 《Advances in Materials Physics and Chemistry》 2012年第4期226-231,共6页 材料物理与化学进展(英文)
关键词 SPRAY PYROLYSIS CdS ANNEALING Temperature STRUCTURAL Optical Band Gap Spray Pyrolysis CdS Annealing Temperature Structural Optical Band Gap
  • 相关文献

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部