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Surface Mapping of Resistive Switching CrO<sub>x</sub> Thin Films

Surface Mapping of Resistive Switching CrO<sub>x</sub> Thin Films
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摘要 In this work, we investigated resistive switching behavior of CrO<sub>x</sub> thin films grown by using sputtering technique. Conventional I-V measurements obtained from Ag/CrO<sub>x</sub>/Pt/Ti/SiO<sub>2</sub>/Si structures depict the bipolar switching behavior, which is controlled by formation/dissolution processes of Ag conducting filaments through electrochemical redox reaction under external electric field driven. Conductive atomic force microscopy (C-AFM) technique provides the valuable mapping images of existing Ag filaments at low resistance state as well as the characteristics of filament distributions and diameters. This study also reveals that where the higher amplitude of topography is, the easier possibility of forming conducting filament paths is on CrO<sub>x</sub> surface films. In this work, we investigated resistive switching behavior of CrO<sub>x</sub> thin films grown by using sputtering technique. Conventional I-V measurements obtained from Ag/CrO<sub>x</sub>/Pt/Ti/SiO<sub>2</sub>/Si structures depict the bipolar switching behavior, which is controlled by formation/dissolution processes of Ag conducting filaments through electrochemical redox reaction under external electric field driven. Conductive atomic force microscopy (C-AFM) technique provides the valuable mapping images of existing Ag filaments at low resistance state as well as the characteristics of filament distributions and diameters. This study also reveals that where the higher amplitude of topography is, the easier possibility of forming conducting filament paths is on CrO<sub>x</sub> surface films.
作者 Kim Ngoc Pham Kieu Hanh Thi Ta Lien Thuong Thi Nguyen Vinh Cao Tran Bach Thang Phan Kim Ngoc Pham;Kieu Hanh Thi Ta;Lien Thuong Thi Nguyen;Vinh Cao Tran;Bach Thang Phan(Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh City, Vietnam;Faculty of Resources and Environment, Thu Dau Mot University, Binh Duong City, Vietnam;Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh City, Vietnam)
出处 《Advances in Materials Physics and Chemistry》 2016年第3期21-27,共7页 材料物理与化学进展(英文)
关键词 Resistive Switching Chromium Oxide C-AFM Surface Mapping Metal Filament Resistive Switching Chromium Oxide C-AFM Surface Mapping Metal Filament
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