摘要
In this work, the impact of the substrate annealing temperature on the thickness and roughness of La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> thin films was verified. A group of LTO Thin films was grown on Si (100) substrates successfully via pulsed laser deposition technique (PLD) at various annealing temperatures with a constant numbers of pulses and energy per pulse. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) were used to investigate the thickness and roughness of the deposited <span style="white-space:normal;">La</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">Ti</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">7</sub> thin films. The average thickness of the thin films was decreased due to the increasing in the annealing temperature linearly;the maximum thickness was found (231 nm) when LTO thin film deposited at 500<span style="white-space:nowrap;"><span style="white-space:nowrap;">°</span><span style="white-space:nowrap;">C</span></span>. The root mean square roughness was increased linearly with increasing the substrate Temperatures. The minimum roughness was found (0.254 nm) when LTO deposited at (500<span style="white-space:nowrap;"><span style="white-space:nowrap;">°</span><span style="white-space:nowrap;">C</span></span>). From the obtained results, its clear evidence that the annealing temperature has an influence on the thickness and roughness of the LTO thin films.
In this work, the impact of the substrate annealing temperature on the thickness and roughness of La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> thin films was verified. A group of LTO Thin films was grown on Si (100) substrates successfully via pulsed laser deposition technique (PLD) at various annealing temperatures with a constant numbers of pulses and energy per pulse. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) were used to investigate the thickness and roughness of the deposited <span style="white-space:normal;">La</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">Ti</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">7</sub> thin films. The average thickness of the thin films was decreased due to the increasing in the annealing temperature linearly;the maximum thickness was found (231 nm) when LTO thin film deposited at 500<span style="white-space:nowrap;"><span style="white-space:nowrap;">°</span><span style="white-space:nowrap;">C</span></span>. The root mean square roughness was increased linearly with increasing the substrate Temperatures. The minimum roughness was found (0.254 nm) when LTO deposited at (500<span style="white-space:nowrap;"><span style="white-space:nowrap;">°</span><span style="white-space:nowrap;">C</span></span>). From the obtained results, its clear evidence that the annealing temperature has an influence on the thickness and roughness of the LTO thin films.
作者
Mohamed A. Baba
Ala Gasim
Abdelmoneim Mohamed Awadelgied
Nafie Abdallatief Almuslet
Ahmed Mohamed Salih
Mohamed A. Baba;Ala Gasim;Abdelmoneim Mohamed Awadelgied;Nafie Abdallatief Almuslet;Ahmed Mohamed Salih(Department of Laser System, Institute of Laser, Sudan University of Science and Technology, Khartoum, Sudan;Institute of Frontier and Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China;Department of Physics, University of Science and Technology of China, Hefei, China;Department of General Science, Karrary University, Omdurman, Sudan;Almogran College of Science and Technology, Khartoum, Sudan)