摘要
The Spinal Ferrite CoCe<sub>x</sub>Fe<sub>2</sub>?<sub>x</sub>O<sub>4</sub> with different compositions (x = 0.0, 0.33, 0.66, 1.0) were prepared by solid state reaction method. FTIR (Fourier Transform Infrared Spectroscopy), SEM (Scanning Electron Microscopy) and UV Spectroscopy (Ultraviolet) have been used to study the phase conformation, morphology and structural properties of all synthesized compositions respectively. Lattice constant was observed to be decreased as smaller ionic radii Co<sup>2+</sup> (0.74 ?) replaced the higher ionic radii Ce<sup>2+</sup> (1.14 ?). FTIR confirm the formation of cubic spinal ferrites by stretching vibration of metal oxide ion mechanism. SEM shows the surface morphology and grain size for synthesized cubic spinal ferrites in the range of 1.25 - 2.65 μm. Optical band gap energy was determined in the range of 1.4575 - 1.425 eV for x = 0.0 to 1.0 nano-ferrites, respectively. This range of band gap energy indicates that the synthesized ferrites have potential applications in electrical devices.
The Spinal Ferrite CoCe<sub>x</sub>Fe<sub>2</sub>?<sub>x</sub>O<sub>4</sub> with different compositions (x = 0.0, 0.33, 0.66, 1.0) were prepared by solid state reaction method. FTIR (Fourier Transform Infrared Spectroscopy), SEM (Scanning Electron Microscopy) and UV Spectroscopy (Ultraviolet) have been used to study the phase conformation, morphology and structural properties of all synthesized compositions respectively. Lattice constant was observed to be decreased as smaller ionic radii Co<sup>2+</sup> (0.74 ?) replaced the higher ionic radii Ce<sup>2+</sup> (1.14 ?). FTIR confirm the formation of cubic spinal ferrites by stretching vibration of metal oxide ion mechanism. SEM shows the surface morphology and grain size for synthesized cubic spinal ferrites in the range of 1.25 - 2.65 μm. Optical band gap energy was determined in the range of 1.4575 - 1.425 eV for x = 0.0 to 1.0 nano-ferrites, respectively. This range of band gap energy indicates that the synthesized ferrites have potential applications in electrical devices.
作者
Zeeshan Ahmad
Zeeshan Ahmad(University of The Punjab, Lahore, Pakistan)
