摘要
We present a theoretical study of the acoustic properties of graphene-semiconductor layered structures. The transmission coefficient for longitudinal acoustic waves through the structure is evaluated by using the usual transfer matrix method. We find that the finite thickness of the graphene layer can affect significantly the transmission spectrum of the proposed structure. The features of the sound transmittance depend strongly on the number of the graphene layers. For mul-ti-layer graphene-semiconductor structures, the sound transmission spectrum looks very similar to that for an ideal superlattice. For such structures, terahertz acoustic forbidden gap can be observed even when a thick semiconductor layer is considered. These results are the consequence of the Bragg’s condition for sound waves. This study is relevant to the exploration of the acoustic properties of graphene-based layered structures and to the application of graphene as high-frequency acoustic devices.
We present a theoretical study of the acoustic properties of graphene-semiconductor layered structures. The transmission coefficient for longitudinal acoustic waves through the structure is evaluated by using the usual transfer matrix method. We find that the finite thickness of the graphene layer can affect significantly the transmission spectrum of the proposed structure. The features of the sound transmittance depend strongly on the number of the graphene layers. For mul-ti-layer graphene-semiconductor structures, the sound transmission spectrum looks very similar to that for an ideal superlattice. For such structures, terahertz acoustic forbidden gap can be observed even when a thick semiconductor layer is considered. These results are the consequence of the Bragg’s condition for sound waves. This study is relevant to the exploration of the acoustic properties of graphene-based layered structures and to the application of graphene as high-frequency acoustic devices.
