摘要
μ-Czochralski technique has been analyzed using two-dimensional crystallization simulator. It is observed that the temperature is relatively uniform in the entire Si region after the laser irradiation because the heat conductivity of the Si region is much higher than that of the underneath SiO2. Grain growth advances from the grain filter to the channel region and continues until it collides with what advances from random nucleation in the channel region. When the initial temperature is high, the random nucleation rarely occurs even under the supercooling condition, and the grain size becomes large. Moreover, it is qualitatively reproduced that the grain size increases as the irradiated energy of the laser irradiation increases.
μ-Czochralski technique has been analyzed using two-dimensional crystallization simulator. It is observed that the temperature is relatively uniform in the entire Si region after the laser irradiation because the heat conductivity of the Si region is much higher than that of the underneath SiO2. Grain growth advances from the grain filter to the channel region and continues until it collides with what advances from random nucleation in the channel region. When the initial temperature is high, the random nucleation rarely occurs even under the supercooling condition, and the grain size becomes large. Moreover, it is qualitatively reproduced that the grain size increases as the irradiated energy of the laser irradiation increases.
