摘要
In this study, In<sub>2</sub>S<sub>3</sub> thin films have been deposited on ITO and fluorine-tinoxide FTO coated glass substrates by single source vacuum thermal evaporation annealed in vacuum a 300°C - 400°C for 1 h. The samples structure was characterized by X-ray diffraction, revealing the quadratic structure of In<sub>2</sub>S<sub>3</sub> and the crystallinity depends on the temperature of annealing and nature of substrate. The various structural parameters, such as, crystalline size, dislocation density, strain and texture coefficient were calculated. The optical properties show that the refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model. By using this model, the dispersion parameters and the high-frequency dielectric constant were determined. The Hall Effect has been studied at room temperature. The Hall voltages, the Hall coefficient (RH) and mobility (μH) have been measured at different magnetic and electric fields. The films show n-type behavior irrespective of temperature and composition.
In this study, In<sub>2</sub>S<sub>3</sub> thin films have been deposited on ITO and fluorine-tinoxide FTO coated glass substrates by single source vacuum thermal evaporation annealed in vacuum a 300°C - 400°C for 1 h. The samples structure was characterized by X-ray diffraction, revealing the quadratic structure of In<sub>2</sub>S<sub>3</sub> and the crystallinity depends on the temperature of annealing and nature of substrate. The various structural parameters, such as, crystalline size, dislocation density, strain and texture coefficient were calculated. The optical properties show that the refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model. By using this model, the dispersion parameters and the high-frequency dielectric constant were determined. The Hall Effect has been studied at room temperature. The Hall voltages, the Hall coefficient (RH) and mobility (μH) have been measured at different magnetic and electric fields. The films show n-type behavior irrespective of temperature and composition.
作者
Fethi Aousgi
Youssef Trabelsi
Aoussaj Sbai
Billel Khalfallah
Radhouane Chtourou
Fethi Aousgi;Youssef Trabelsi;Aoussaj Sbai;Billel Khalfallah;Radhouane Chtourou(Laboratory of Nanomaterials and Renewable Energy Systems LaNSER, Research and Technology Center of Energy, Borj-Cedria Science and Technology Park, Hammam-Lif, Tunisia;Physics Department, College of Arts and Sciences in Muhail Asir, King Khalid University, Abha, Saudi Arabia;Laboratory of Photovoltaic and Semiconductor Materials, University of Tunis El Manar, ENIT, Tunis, Tunisia)
