摘要
Chalcogenide films find many applications in electronics as memory device, laser writer & xerography. To tailor the property to the requirement, various compositions of Cd, Te and Se have been deposited and characterized optically. Films have been deposited by thermal evaporation as well as by electron beam evaporation. Thermal analysis such as TGA, DTA and DSC has been carried out before deposition to ensure the composition. Dependence of Eg on the composition has been justified from (T% data) Transmittance measurements. Drastic changes in optical property due to annealing in the range 200°C to 400°C have been investigated.
Chalcogenide films find many applications in electronics as memory device, laser writer & xerography. To tailor the property to the requirement, various compositions of Cd, Te and Se have been deposited and characterized optically. Films have been deposited by thermal evaporation as well as by electron beam evaporation. Thermal analysis such as TGA, DTA and DSC has been carried out before deposition to ensure the composition. Dependence of Eg on the composition has been justified from (T% data) Transmittance measurements. Drastic changes in optical property due to annealing in the range 200°C to 400°C have been investigated.
