摘要
The effects of annealing of CuIn1–xAlxS2thin films for different temperature, which were grown by thermal evaporation, were investigated through X-ray diffraction (XRD), energy dispersive X-ray analysis (EDS) and optical absorption measurements. Post growth was used to modify the structural and optical properties of the CIAS thin films. Then it realized in three different temperatures 250, 300 and 400℃. It is found that significant difference of the transparent films in function of annealing temperature. The FWHM in the X-ray diffraction pattern is found to decrease with an increase in annealing temperature indicating that the crystalline nature of the CIAS improves with increase in annealing temperature. The position of the (112) peak and other peaks in the X-ray diffraction pattern has been observed to shift to higher values of 2θ with the increase of gallium concentration. We demonstrate a significant enhancement of the interdiffusion in the dot thin film.
The effects of annealing of CuIn1–xAlxS2thin films for different temperature, which were grown by thermal evaporation, were investigated through X-ray diffraction (XRD), energy dispersive X-ray analysis (EDS) and optical absorption measurements. Post growth was used to modify the structural and optical properties of the CIAS thin films. Then it realized in three different temperatures 250, 300 and 400℃. It is found that significant difference of the transparent films in function of annealing temperature. The FWHM in the X-ray diffraction pattern is found to decrease with an increase in annealing temperature indicating that the crystalline nature of the CIAS improves with increase in annealing temperature. The position of the (112) peak and other peaks in the X-ray diffraction pattern has been observed to shift to higher values of 2θ with the increase of gallium concentration. We demonstrate a significant enhancement of the interdiffusion in the dot thin film.
