期刊文献+

Titanium Oxide Nanorods pH Sensors:Comparison between Voltammetry and Extended Gate Field Effect Transistor Measurements

下载PDF
导出
摘要 In recent years there has increased interest in the characterization of titanium oxide nanorods for application in analytical devices. The titanium oxide nanorods (NRTiO) were obtained by hydrothermal reaction with a NaOH solution heated in the autoclave at 150°C for up to 50 h. Experimental data indicate that the prepared nanorods consist of anatase and rutile phases, with a possible interlayer structure. The NRTiO was investigated as pH sensor in the pH range 2 - 12, and the extended gate field effect transistor (EGFET) configuration presented a sensitivity of 49.6 mV/pH. Voltammetric data showed a sensitivity of 47.8 mV/pH. These results indicate that the material is a promising candidate for applications as an EGFET-pH sensor and as a disposable biosensor in the future. In recent years there has increased interest in the characterization of titanium oxide nanorods for application in analytical devices. The titanium oxide nanorods (NRTiO) were obtained by hydrothermal reaction with a NaOH solution heated in the autoclave at 150°C for up to 50 h. Experimental data indicate that the prepared nanorods consist of anatase and rutile phases, with a possible interlayer structure. The NRTiO was investigated as pH sensor in the pH range 2 - 12, and the extended gate field effect transistor (EGFET) configuration presented a sensitivity of 49.6 mV/pH. Voltammetric data showed a sensitivity of 47.8 mV/pH. These results indicate that the material is a promising candidate for applications as an EGFET-pH sensor and as a disposable biosensor in the future.
出处 《Materials Sciences and Applications》 2014年第7期459-466,共8页 材料科学与应用期刊(英文)
基金 This work was supported by FAPESP,FAPEMIG,CNPq and CAPES
  • 相关文献

参考文献1

二级参考文献9

  • 1Pan C W, Chou J C, Kao I K et al. IEEE Sensors Journal[J], 2003, 3:164.
  • 2Liao H K, Chou . C, Chung W Y, Sun T P, Hsiung S K. Sensors and Actuators B[J], 1998, 50:104.
  • 3Kreider K G, Michael J. Tarlov et al. Sensors and Actuators B[J], 1995, 28:167.
  • 4Chiang J L, Chou J C, Chen Y C. Sensors and Actuators B[J], 2001, 76:624.
  • 5Chiang J L, Chou J C, Chen Y C et al. Japanese Journal of Applied Physics[J], 2003, 42:4973.
  • 6Yule Z, Shousn Z, Tao L. Chinese Journal of Semiconductors [J], 1994, 12:838.
  • 7Chou J C, Li Y S, Chiang J L. Sensors and Actuators B[J], 2000, 71:73.
  • 8Chin Y L, Chou J C, Chung W Y et al. Sensors and Actuators B[J], 2001, 75:36.
  • 9Bousse L, Mostarshed S, van der Schoot B et al. Sensors and Actuators B[J], 1994, 17:157.

共引文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部