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A Study by Ab-Initio Calculation of Structural and Electronic Properties of Semiconductor Nanostructures Based on ZnSe

A Study by Ab-Initio Calculation of Structural and Electronic Properties of Semiconductor Nanostructures Based on ZnSe
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摘要 Our calculations are based on the modeling technique and simulation Ab-Initio that appeals to the Density Functional Theory (DFT) relying on the Full-Potential Linearized Augmented Plane Waves (FP-LAPW) method that requires a calculation process using approximations such as Local Density (LDA) and Generalized Gradient (GGA) developed in the modelling software of nanostructures WIEN2k. The optimal structure of the binary semiconductor ZnSe crystallizing in the complex phase of Zinc Blende (B3) was determined by studying the variation of energy depending on the volume of the elementary cell. Then the electronic properties of the optimized state were analyzed such as the gap energy, the total density of states (TDOS), the partial density of states (PDOS) and the repartition of the electronic charge density. The obtained results were successful compared with other theoretical and experimental values reported in literature. Our calculations are based on the modeling technique and simulation Ab-Initio that appeals to the Density Functional Theory (DFT) relying on the Full-Potential Linearized Augmented Plane Waves (FP-LAPW) method that requires a calculation process using approximations such as Local Density (LDA) and Generalized Gradient (GGA) developed in the modelling software of nanostructures WIEN2k. The optimal structure of the binary semiconductor ZnSe crystallizing in the complex phase of Zinc Blende (B3) was determined by studying the variation of energy depending on the volume of the elementary cell. Then the electronic properties of the optimized state were analyzed such as the gap energy, the total density of states (TDOS), the partial density of states (PDOS) and the repartition of the electronic charge density. The obtained results were successful compared with other theoretical and experimental values reported in literature.
作者 A. Rachidi E. H. Atmani N. Fazouan M. Boujnah A. Rachidi;E. H. Atmani;N. Fazouan;M. Boujnah(Department of Physics, Faculty of Sciences and Techniques, Hassan II University, Casablanca, Morocco;Department of Physics, Faculty of Sciences and Techniques, Sultan Moulay Slimane University, Beni Mellal, Morocco;Department of Physics, Faculty of Sciences, Mohamed V University, Rabat, Morocco)
出处 《Materials Sciences and Applications》 2016年第9期562-573,共13页 材料科学与应用期刊(英文)
关键词 ZNSE Ab-Initio Calculations Density Functional Theory Band Gap Energy Density of States Electronic Charge Density ZnSe Ab-Initio Calculations Density Functional Theory Band Gap Energy Density of States Electronic Charge Density
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