摘要
In this work, pure and different metal ions doped ZnO thin films were obtained by a facile electrochemical deposition process. Different morphologies of ZnO, such as nanoplates, nanoparticles, as well as dense film can be obtained by doping Cu2+, In3+, and Al3+, respectively. Besides, the electrical properties of ZnO were also dependent on the doping ions. In this work, only pure ZnO shows resistive switching characteristics, indicating that the defects in ZnO is a key role in inducing resistive switching behaviour.
In this work, pure and different metal ions doped ZnO thin films were obtained by a facile electrochemical deposition process. Different morphologies of ZnO, such as nanoplates, nanoparticles, as well as dense film can be obtained by doping Cu2+, In3+, and Al3+, respectively. Besides, the electrical properties of ZnO were also dependent on the doping ions. In this work, only pure ZnO shows resistive switching characteristics, indicating that the defects in ZnO is a key role in inducing resistive switching behaviour.
