摘要
The integrated investigations of the stationary characteristics of photoconductivity (the spectral distribution of photoconductivity (PC), luminous-ampere characteristics (LAC), temperature dependences of dark photoconductivity) and the thermostimulated current (TSC) for crystalline and glassy lead thiogermanate (PbGeS3) were performed. It was determined, as a function of crystals growing rate, there are one or two impurity maxima except for the native one in photoconductivity spectra. For the glassy lead thiogermanate in the range of wave lengths of 0.4 - 1.0 μm in PC spectra was revealed the hysteresis at the change of direction wave lengths sweep of incident light, conditioned by the phenomenon of induced impurity conductivity. The activation of PC, caused by thermal emptying of attachment levels, was observed on the temperature dependences of photoconductivity.
The integrated investigations of the stationary characteristics of photoconductivity (the spectral distribution of photoconductivity (PC), luminous-ampere characteristics (LAC), temperature dependences of dark photoconductivity) and the thermostimulated current (TSC) for crystalline and glassy lead thiogermanate (PbGeS3) were performed. It was determined, as a function of crystals growing rate, there are one or two impurity maxima except for the native one in photoconductivity spectra. For the glassy lead thiogermanate in the range of wave lengths of 0.4 - 1.0 μm in PC spectra was revealed the hysteresis at the change of direction wave lengths sweep of incident light, conditioned by the phenomenon of induced impurity conductivity. The activation of PC, caused by thermal emptying of attachment levels, was observed on the temperature dependences of photoconductivity.
