摘要
The paper presents the results of studies surface microrelief, frequency-temperature characteristics of the imaginary part of the dielectric permittivity and dielectric loss of PE+TlInSe2 composite materials in 25。C - 150。C temperature and 25 Hz - 1 MHz frequency range before and after application of the aluminum nano-particles with a size of 50 nm. The change in the amount of semicon-ductor filler TlInSe2 and aluminum nano-particles changes the state of the surface and the frequency-temperature characteristics of composite materials PE+xvol.%TlInSe2, which allows to obtain composites with the desired dielectric permittivity and dielectric loss.
The paper presents the results of studies surface microrelief, frequency-temperature characteristics of the imaginary part of the dielectric permittivity and dielectric loss of PE+TlInSe2 composite materials in 25。C - 150。C temperature and 25 Hz - 1 MHz frequency range before and after application of the aluminum nano-particles with a size of 50 nm. The change in the amount of semicon-ductor filler TlInSe2 and aluminum nano-particles changes the state of the surface and the frequency-temperature characteristics of composite materials PE+xvol.%TlInSe2, which allows to obtain composites with the desired dielectric permittivity and dielectric loss.
