摘要
The V-Shaped Module (VSM) solar cell technology, which breaks the traditional concept of solar cell system, has been proven to enhance power conversion efficiency of some solar cells and has offered opportunities to increase generation power densities in area-limited applications. Compared to a planar cell system, the VSM has an additional opportunity to absorb photons and taps the potential of solar cells. In this study, the VSM, the proposed common technique enhancing efficiencies of various solar cells, was investigated by using commercially available multi-crystalline silicon solar cells. The VSM technique enables the efficiencies of the multi-crystalline silicon cells to increase from 13.4% to 20.2%, giving an efficiency boost of 51%. Though the efficiency of the cells increases, the open-circuit voltage of the cells decreases owing to the VSM technique. Furthermore, the obvious reduction in open-circuit voltage in the VSM was found and the phenomenon is explained for the first time.
The V-Shaped Module (VSM) solar cell technology, which breaks the traditional concept of solar cell system, has been proven to enhance power conversion efficiency of some solar cells and has offered opportunities to increase generation power densities in area-limited applications. Compared to a planar cell system, the VSM has an additional opportunity to absorb photons and taps the potential of solar cells. In this study, the VSM, the proposed common technique enhancing efficiencies of various solar cells, was investigated by using commercially available multi-crystalline silicon solar cells. The VSM technique enables the efficiencies of the multi-crystalline silicon cells to increase from 13.4% to 20.2%, giving an efficiency boost of 51%. Though the efficiency of the cells increases, the open-circuit voltage of the cells decreases owing to the VSM technique. Furthermore, the obvious reduction in open-circuit voltage in the VSM was found and the phenomenon is explained for the first time.
作者
Jianming Li
Jianming Li(Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)