摘要
The electrical performance of a photovoltaic (PV) silicon solar cell is described by its current–voltage (I–V) character-istic curve, which is in turn determined by device and material properties. In this study, an investigation of the performance and device parameters of photovoltaic single crystalline silicon (Si.) solar cell of the construction n+pp++ PESC(Passivatted Emitter Solar Cell) at different conditions of solar irradiance, title angle and mirror boosting effects had been studied. Also the paper reports on the performance data of the Si. cell, using standard I–V characteristic curves to obtain output parameters and to show that there are possible performance degrading defects presents.
The electrical performance of a photovoltaic (PV) silicon solar cell is described by its current–voltage (I–V) character-istic curve, which is in turn determined by device and material properties. In this study, an investigation of the performance and device parameters of photovoltaic single crystalline silicon (Si.) solar cell of the construction n+pp++ PESC(Passivatted Emitter Solar Cell) at different conditions of solar irradiance, title angle and mirror boosting effects had been studied. Also the paper reports on the performance data of the Si. cell, using standard I–V characteristic curves to obtain output parameters and to show that there are possible performance degrading defects presents.
