摘要
In this paper, the authors present and discuss a model for Cu-Se nano resonant tunneling diodes (RTDs) fabricated by negative template assisted electrodeposition technique and formulate the mathematical equations for it. The model successfully explains the experimental findings.
In this paper, the authors present and discuss a model for Cu-Se nano resonant tunneling diodes (RTDs) fabricated by negative template assisted electrodeposition technique and formulate the mathematical equations for it. The model successfully explains the experimental findings.
