摘要
Thermoelectric properties of Ce0.09Fe0.67Co3.33Sb12/FeSb2.1Te multi-layered structures with period of 5 nm were studied in temperature ranging from 300 K to 500 K. Structures were prepared by Pulsed Laser Deposition (PLD) on fused sili- ca quartz glass substrates at the substrate temperature during the deposition Ts = 230°C and Ts = 250°C with the laser beam energy density Ds = 3 Jcm-2. In the contribution temperature dependencies of the in-plane electrical conductivity, the Seebeck coefficient and the resultant power factor together with room temperature value of thermoelectric figure of merit are presented.
Thermoelectric properties of Ce0.09Fe0.67Co3.33Sb12/FeSb2.1Te multi-layered structures with period of 5 nm were studied in temperature ranging from 300 K to 500 K. Structures were prepared by Pulsed Laser Deposition (PLD) on fused sili- ca quartz glass substrates at the substrate temperature during the deposition Ts = 230°C and Ts = 250°C with the laser beam energy density Ds = 3 Jcm-2. In the contribution temperature dependencies of the in-plane electrical conductivity, the Seebeck coefficient and the resultant power factor together with room temperature value of thermoelectric figure of merit are presented.
基金
supported by Czech Grant Agency under GACR P108/10/1315 and P108/13-33056S
