摘要
This article introduces an EEPROM memory cell model that is different from the equivalent capacitance model. This model uses high-frequency components in circuit design, including MOS transistors, zener diodes, resistors, capacitors, etc., and builds a model that can be used in most analog environments. The simulation of the transient process of write and read operations helps designers understand the working principle of EEPROM, and it can also be applied to the overall circuit design. According to the structure and working principle of the EEPROM cell device, a model of its equivalent circuit is established, and the read, write, and erase operations of the EEPROM cell are transiently simulated using this model. The simulation results verify the correctness of the model.
This article introduces an EEPROM memory cell model that is different from the equivalent capacitance model. This model uses high-frequency components in circuit design, including MOS transistors, zener diodes, resistors, capacitors, etc., and builds a model that can be used in most analog environments. The simulation of the transient process of write and read operations helps designers understand the working principle of EEPROM, and it can also be applied to the overall circuit design. According to the structure and working principle of the EEPROM cell device, a model of its equivalent circuit is established, and the read, write, and erase operations of the EEPROM cell are transiently simulated using this model. The simulation results verify the correctness of the model.
