摘要
This paper describes a low-noise front-end readout circuit for CZT detectors based on TSMC 0.35 um mixed-single CMOS technology;mainly analyzes the noise model of the detector-preamplifier and presents the low-noise circuit schematic of charge sensitive preamplifier and shaper. Considering the parasitical influences, the circuit and layout-design are optimized to reduce noise. The preliminary simulation results show that, the equivalent noise charge (ENC) is 74 e﹣ (rms), noise slope is 9 e﹣/pF, power consumption is 2 mW, and non-linearity
This paper describes a low-noise front-end readout circuit for CZT detectors based on TSMC 0.35 um mixed-single CMOS technology;mainly analyzes the noise model of the detector-preamplifier and presents the low-noise circuit schematic of charge sensitive preamplifier and shaper. Considering the parasitical influences, the circuit and layout-design are optimized to reduce noise. The preliminary simulation results show that, the equivalent noise charge (ENC) is 74 e﹣ (rms), noise slope is 9 e﹣/pF, power consumption is 2 mW, and non-linearity is
