摘要
In this paper, the design of a novel low-noise front-end readout circuit for Cadmium zinc telluride (CdZnTe) X-ray and γ-ray detectors is described. The front-end readout circuits include the charge sensitive amplifier (CSA) and the CR-RC shaper is implemented in TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 4.9 mm × 2.2 mm. The simulation results show that, the noise performance is 46 electrons + 10 electrons/pF, and power consumption is 1.65 mW per channel.
In this paper, the design of a novel low-noise front-end readout circuit for Cadmium zinc telluride (CdZnTe) X-ray and γ-ray detectors is described. The front-end readout circuits include the charge sensitive amplifier (CSA) and the CR-RC shaper is implemented in TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 4.9 mm × 2.2 mm. The simulation results show that, the noise performance is 46 electrons + 10 electrons/pF, and power consumption is 1.65 mW per channel.
