摘要
The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3-10 GHz microwave monolithic integrated circuit (MMIC). The proposed UWB LNA amplifier was implemented with both co-planer waveguide (CPW) layout and 0.15-μm GaAs D-mode pHEMT technology. Based on those technologies, this proposed UWB LNA with a chip size of 1.5 mm x 1.4 mm, obtained a flatness gain 3-dB bandwidth of 4 - 8 GHz, the constant gain of 4 dB, noise figure lower than 5 dB, and the return loss better than –8.5 dB. Based on our experimental results, the low noise amplifier using the inductive-series peaking technique can obtain a wider bandwidth, low power consumption and high flatness of gain in the 3 - 10 GHz. Finally, the overall LNA characterization exhibits ultra-wide bandwidth and low noise characterization, which illustrates that the proposed UWB LNA has a compact size and favorable RF characteristics. This UWB LNA circuit demonstrated the high RF characterization and could provide for the low noise micro-wave circuit applications.
The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3-10 GHz microwave monolithic integrated circuit (MMIC). The proposed UWB LNA amplifier was implemented with both co-planer waveguide (CPW) layout and 0.15-μm GaAs D-mode pHEMT technology. Based on those technologies, this proposed UWB LNA with a chip size of 1.5 mm x 1.4 mm, obtained a flatness gain 3-dB bandwidth of 4 - 8 GHz, the constant gain of 4 dB, noise figure lower than 5 dB, and the return loss better than –8.5 dB. Based on our experimental results, the low noise amplifier using the inductive-series peaking technique can obtain a wider bandwidth, low power consumption and high flatness of gain in the 3 - 10 GHz. Finally, the overall LNA characterization exhibits ultra-wide bandwidth and low noise characterization, which illustrates that the proposed UWB LNA has a compact size and favorable RF characteristics. This UWB LNA circuit demonstrated the high RF characterization and could provide for the low noise micro-wave circuit applications.
