摘要
本文设计了一款基于0.25 um氮化镓PHEMT工艺的8.5-10.5GHz MMIC收发前端芯片,该收发前端由一个功率放大器和一个单刀双掷开关组成。经仿真优化后,在工艺线上进行了流片,并载片测试了其性能参数。测试结果显示,发射路的功率放大器饱和输出功率大于33d Bm,功率附加效率39%。接收路开关插入损耗0.6d B,开关隔离度大于37d B。
This paper introduces a 8.5-10.5GHz MMIC transceiver front end chip based on 0.25 um gallium PHEMT process, which consists of a power amplifier and a single pole double throw switch.The optimized chip is verified by simulation and tapeout on the process line,the performance parameters are tested.Test results show that the power amplifier saturation output power is greater than 33dBm, power additional efficiency 39%. SPDT switch achieve low input loss 0.6dB, switch isolation greater than 37dB.
出处
《电子测试》
2017年第5X期16-17,共2页
Electronic Test
关键词
前端芯片
测试
front end chip
test
