基于RadFET的宽范围电离总剂量效应监测系统及试验研究

Research of Total Ionizing Dose Effects of RadFET for Wide Range

设计了一种基于辐射剂量传感器(RadFET)的辐射总剂量监测系统,并利用60Co-γ射线和电子加速器对金属氧化物半导体(MOS)结构的RadFET进行了电离总剂量效应模拟试验,得到了器件阈值电压随辐照剂量的变化情况.结果表明,该器件具有良好的抗辐射能力,累积剂量可达到1.0 ×105 Gy,同时,在空间应用时需重点考虑阈值电压、环境温度以及击穿电压等敏感参数.

A observation system for total ionizing dose (TID) based on radiation-sensing field-effect transistor (RadFET) is presented.TID is done with this system by 60Co-γ and electron accelerator,and the relationship between threshold voltage and accumulated dose is given.The results indicate that the RadFET is susceptible for TID,and accumulated dose can reach 1.0 × 105 Gy.Meanwhile,sensitive parameter must be taken into account for space application,such as threshold voltage,temperature,breakdown voltage and so on.