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The coupling influence of UV illumination and strain on the surface potential distribution of a single ZnO micro/nano wire

The coupling influence of UV illumination and strain on the surface potential distribution of a single ZnO micro/nano wire
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摘要 Interface/surface properties play an important role in the development of most electronic devices. In particular, nanowires possess large surface areas that create new challenges for their optoelectronic applications. Here, we demonstrated that the piezoelectric field and UV laser illumination modulate the surface potential distribution of a bent ZnO wire by the Kelvin probe force microscopy technology. Experiments showed that the surface potential distribution was changed by strain. The difference of surface potential between the outer/inner sides of the ZnO wire increased with increasing strain. Under UV laser illumination, the difference of surface potential between the outer/inner sides of the ZnO wire increased with increasing strain and illumination time. The origin of the observed phenomenon was discussed in terms of the energy band diagram of the bent wire and adsorption/desorption theory. It is suggested that the change of surface potential can be attributed to the uneven distribution of the carrier density across the wire deduced by the piezoelectric effect and surface adsorption/desorption of oxygen ions. This study provides an important insight into the surface and piezoelectric effects on the surface potential and can help optimize the performance of electronic and optoelectronic devices. [Figure not available: see fulltext.] © 2016, Tsinghua University Press and Springer-Verlag Berlin Heidelberg. Interface/surface properties play an important role in the development of most electronic devices. In particular, nanowires possess large surface areas that create new challenges for their optoelectronic applications. Here, we demonstrated that the piezoelectric field and UV laser illumination modulate the surface potential distribution of a bent ZnO wire by the Kelvin probe force microscopy technology. Experiments showed that the surface potential distribution was changed by strain. The difference of surface potential between the outer/inner sides of the ZnO wire increased with increasing strain. Under UV laser illumination, the difference of surface potential between the outer/inner sides of the ZnO wire increased with increasing strain and illumination time. The origin of the observed phenomenon was discussed in terms of the energy band diagram of the bent wire and adsorption/desorption theory. It is suggested that the change of surface potential can be attributed to the uneven distribution of the carrier density across the wire deduced by the piezoelectric effect and surface adsorption/desorption of oxygen ions. This study provides an important insight into the surface and piezoelectric effects on the surface potential and can help optimize the performance of electronic and optoelectronic devices. [Figure not available: see fulltext.] © 2016, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.
出处 《Nano Research》 SCIE EI CAS CSCD 2016年第9期2572-2580,共9页 纳米研究(英文版)
基金 This work was supported by the National Basic Research Program of China (No.2013CB932602),the Program of Introducing Talents of Discipline to Universities (No.B14003),National Natural Science Foundation of China (Nos.51527802,51232001,and 51572025),Beijing Municipal Science & Technology Commission,the Fundamental Research Funds for Central Universities,State Key Laboratory for Advanced Metals and Materials.
关键词 ZNO ultraviolet illumination STRAIN surface potential ZnO ultraviolet illumination strain surface potential
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  • 1Pereira V. M., Castro Neto A. H.. Strain engineering of graphene’s electronic structure. Phys. Rev. Lett., (2009), 103, 4:046801.
  • 2Maiti A.. Carbon nanotubes: Bandgap engineering with strain. Nat. Mater., (2003), 2, 7:440.
  • 3Chen C. Q., Shi Y., Zhang Y. S., Zhu J., Yan Y. J.. Size dependence of Young’smodulus in ZnO nanowires. Phys. Rev. Lett., (2006), 96, 7:075505.
  • 4Xu S., Qin Y., Xu C., Wei Y., Yang R., Wang Z. L.. Selfpowered nanowire devices. Nat. Nanotechnol., (2010), 5, 5:366.
  • 5Kash K., Van der Gaag B. P., Mahoney D. D., Gozdz A. S., Florez L. T., Harbison J. P., Sturge M.. Observation of quantum confinement bystrain gradients. Phys. Rev. Lett., (1991), 67, 10:1326.
  • 6Bernevig B. A., Zhang S.-C.. Quantum spin Hall effect. Phys. Rev. Lett., (2006), 96, 10:106802.
  • 7Harden J., Mbarga B., éber N., Fodor-Csorba K., Sprunt S., Gleeson J. T., Jákli A.. Giant flexoelectricity ofbentcore nematic liquid crystals. Phys. Rev. Lett., (2006), 97, 15:157802.
  • 8Tagantsev A. K.. Piezoelectricity and flexoelectricityin crystalline dielectrics. Phys. Rev.B, (1986), 34, 8:5883.
  • 9Leong M., Doris B., Kedzierski J., Rim K., Yang M.. Silicondevice scaling to the sub-10-nm regime. Science, (2004), 306, 5704:2057.
  • 10Cao J., Ertekin E., Srinivasan V., Fan W., Huang S., Zheng H., Yim J. W. L., Khanal D. R., Ogletree D. F., Grossman J. C., Wu J.. Strain engineeringand one-dimensional organization of metal-insulator domains in single-crystalvanadium dioxide beams. Nature Nanotech., (2009), 4, 11:732.

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