一种抗辐射高压MOSFET驱动器的设计

A design of radiation hardening high-voltage MOSFET driver

在航天和核物理技术中对抗辐射高压功率电路的需求也越来越强烈。介绍了一种抗辐射高压金属氧化物半导体场效应管(MOSFET)驱动器的设计,该电路基于0.5μm双极-互补金属氧化物半导体-双重扩散金属氧化物半导体(BCD)工艺研制,采用特殊的线路结构,并通过版图设计对闩锁效应、场区和电参数进行抗辐射加固,抗总剂量辐射效应可达到300 krad(Si)。同时,该电路工作电压可达40 V,兼容逻辑门电路(TTL)/互补金属氧化物半导体(CMOS)输入,输出峰值电流1.5 A,可广泛用于航天、核物理实验装备等功率驱动部位。

With the development of space technology and nuclear physics technology, the demand of high voltage power circuit is becoming stronger and stronger. A design of an anti-radiation high voltage Metal-Oxide-Semiconductor Field-Effect-Transistor(MOSFET) driver is presented. The circuit is designed based on 0.5 m BCD(namely Bipolar-Complementary Metal Oxide Semiconductor(CMOS)-Double-Diffused Metal-Oxide Semiconductor(DMOS) technique. The circuit adopts special structure and the layout design for radiation hardening the latch up effect, the field area and electrical parameters. The 300 krad(Si) is used for the design of the circuit. The working voltage of the circuit can reach 40V,and it is compatible with Transistor–Transistor Logic(TTL)/CMOS input. The output peak current is 1.5 A. It can be widely used in aerospace and nuclear physics experiments and other power driving parts.