A novel double-layer film of SiCOF/a-C ： F with a low dielectric constant is deposited using a PECVD system. The chemical structure of the film is characterized with Fourier transform infrared spectroscopy （FTIR）. ...A novel double-layer film of SiCOF/a-C ： F with a low dielectric constant is deposited using a PECVD system. The chemical structure of the film is characterized with Fourier transform infrared spectroscopy （FTIR）. The measurements of the film refractive index reveal that the optical frequency dielectric constant （n^2） of the film is almost constant as a function of air exposure time, however, with increasing annealing temperature, the value of n^2 for the film decreases. Possible mechanisms are discussed in detail. The analysis of SIMS profiles for the metal-insulator-silicon structures reveal that in the Al/a-C ： F/Si structure,the annealing causes a more rapid diffusion of F in AI in comparison with C, but there is no obvious difference in Si. In addition, no recognizable verge exists between SiCOF and a-C ： F films,and the SiCOF film acts as a barrier against the diffusion of carbon into the aluminum layer.展开更多
文摘载波同步是对1090MHz扩展电文(1090MHz Extended Squitter,1090ES)的相位编码信号进行相干解调的前提和基础,研究针对这种调制方式的基于数据辅助的载波频偏估计算法。构建了1090ES相位编码信号的频偏估计模型,提出了一种基于遗传算法的频偏估计算法,详述了该算法的特点及其实现步骤,并通过MATLAB仿真,分析比较了该算法与Kay算法、Fitz算法及M&M算法的频偏估计性能。该算法的频偏估计范围可以达到采样频率的50%,在信噪比高于3 d B时,频偏估计的均方误差接近于修正的克拉美罗界,并且可以同时兼顾频偏估计精度和频偏估计范围。
文摘A novel double-layer film of SiCOF/a-C ： F with a low dielectric constant is deposited using a PECVD system. The chemical structure of the film is characterized with Fourier transform infrared spectroscopy （FTIR）. The measurements of the film refractive index reveal that the optical frequency dielectric constant （n^2） of the film is almost constant as a function of air exposure time, however, with increasing annealing temperature, the value of n^2 for the film decreases. Possible mechanisms are discussed in detail. The analysis of SIMS profiles for the metal-insulator-silicon structures reveal that in the Al/a-C ： F/Si structure,the annealing causes a more rapid diffusion of F in AI in comparison with C, but there is no obvious difference in Si. In addition, no recognizable verge exists between SiCOF and a-C ： F films,and the SiCOF film acts as a barrier against the diffusion of carbon into the aluminum layer.
