The graphene/hexagonal boron-nitride （h-BN） hybrid structure has emerged to extend the performance of graphene- based devices. Here, we investigate the tunable plasmon in one-dimensional h-BN/graphene/h-BN quantum-w...The graphene/hexagonal boron-nitride （h-BN） hybrid structure has emerged to extend the performance of graphene- based devices. Here, we investigate the tunable plasmon in one-dimensional h-BN/graphene/h-BN quantum-well structures. The analysis of optical response and field enhancement demonstrates that these systems exhibit a distinct quantum confine- ment effect for the collective oscillations. The intensity and frequency of the plasmon can be controlled by the barrier width and electrical doping. Moreover, the electron doping and the hole doping lead to very different results due to the asymmetric energy band. This graphene/h-BN hybrid structure may pave the way for future optoelectronic devices.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11474207 and 11374217)the Scientific Research Fund of Sichuan University of Science and Engineering,China(Grant No.2014PY07)
文摘The graphene/hexagonal boron-nitride （h-BN） hybrid structure has emerged to extend the performance of graphene- based devices. Here, we investigate the tunable plasmon in one-dimensional h-BN/graphene/h-BN quantum-well structures. The analysis of optical response and field enhancement demonstrates that these systems exhibit a distinct quantum confine- ment effect for the collective oscillations. The intensity and frequency of the plasmon can be controlled by the barrier width and electrical doping. Moreover, the electron doping and the hole doping lead to very different results due to the asymmetric energy band. This graphene/h-BN hybrid structure may pave the way for future optoelectronic devices.
