Aim To study the relationship between the substrate temperature and the morphology and properties of GaN. Methods\ Applying the hydride chemical vapor deposition method, GaN films were deposited on different kinds of...Aim To study the relationship between the substrate temperature and the morphology and properties of GaN. Methods\ Applying the hydride chemical vapor deposition method, GaN films were deposited on different kinds of substrates, including sapphire, Si(111),Si(100),GaAs and GaP(111) both on the P face and the Ga face. The growth was performed at low temperatures of below 700℃. XRD, Hall measurement, cathodoluminescence (CL) and atomic force microscopy (AFM) were used to characterise the film properties. Results\ It was found that the temperature and the nature of substrate materials influence the layer morphology. Conclusion\ The analysis shows that no apparent relationship exists between the optical properties and layer morphology.展开更多
A new electrodeposition system, with a thin nickel wire as the anode, was used to deposit the CN x thin film on Si(100) substrate from a dicyandiamide-saturated solution in acetonitrile at a high potential. During the...A new electrodeposition system, with a thin nickel wire as the anode, was used to deposit the CN x thin film on Si(100) substrate from a dicyandiamide-saturated solution in acetonitrile at a high potential. During the experiment, when a certain high potential was applied, spark occurred between the Ni wire anode and the Si(100) substrate. The films were characterized by X-ray photoelectron spectroscopy(XPS), Fourier-transform infrared spectroscopy(FTIR), scaning electron microscopy(SEM) and X-ray diffraction(XRD). It was indicated that multiphase of α-C 3N 4, β-C 3N 4 and g-C 3N 4 was obtained in the films. This work is the first attempt to deposit carbon nitride material through a thin nickel wire anode and might provide a new route for preparing pure crystalline C 3N 4.展开更多
文摘Aim To study the relationship between the substrate temperature and the morphology and properties of GaN. Methods\ Applying the hydride chemical vapor deposition method, GaN films were deposited on different kinds of substrates, including sapphire, Si(111),Si(100),GaAs and GaP(111) both on the P face and the Ga face. The growth was performed at low temperatures of below 700℃. XRD, Hall measurement, cathodoluminescence (CL) and atomic force microscopy (AFM) were used to characterise the film properties. Results\ It was found that the temperature and the nature of substrate materials influence the layer morphology. Conclusion\ The analysis shows that no apparent relationship exists between the optical properties and layer morphology.
文摘A new electrodeposition system, with a thin nickel wire as the anode, was used to deposit the CN x thin film on Si(100) substrate from a dicyandiamide-saturated solution in acetonitrile at a high potential. During the experiment, when a certain high potential was applied, spark occurred between the Ni wire anode and the Si(100) substrate. The films were characterized by X-ray photoelectron spectroscopy(XPS), Fourier-transform infrared spectroscopy(FTIR), scaning electron microscopy(SEM) and X-ray diffraction(XRD). It was indicated that multiphase of α-C 3N 4, β-C 3N 4 and g-C 3N 4 was obtained in the films. This work is the first attempt to deposit carbon nitride material through a thin nickel wire anode and might provide a new route for preparing pure crystalline C 3N 4.
