We have observed the two-wave mixing of the photorefractive GaAs/AIGaAs semiinsulating multiple quantum wells fabricated by film lift-off approach and proton implanting technique.Under the non-optimized condition,we h...We have observed the two-wave mixing of the photorefractive GaAs/AIGaAs semiinsulating multiple quantum wells fabricated by film lift-off approach and proton implanting technique.Under the non-optimized condition,we have obtained the two-wave mixing gain larger than 180cm^(-1) at wavelength near 784nm for a field of 10kV/cm.Energy transfer is also observed when the applied field is perpendicular to the grating vector.展开更多
基金Supported by the National Natural Science Foundation of China under the No.69478001.
文摘We have observed the two-wave mixing of the photorefractive GaAs/AIGaAs semiinsulating multiple quantum wells fabricated by film lift-off approach and proton implanting technique.Under the non-optimized condition,we have obtained the two-wave mixing gain larger than 180cm^(-1) at wavelength near 784nm for a field of 10kV/cm.Energy transfer is also observed when the applied field is perpendicular to the grating vector.