Combining theory and computation,we explore the Goos–H¨anchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin–orbit coupling(SOC).GH displacement depe...Combining theory and computation,we explore the Goos–H¨anchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin–orbit coupling(SOC).GH displacement depends on electron spins thanks to Dresselhaus SOC,therefore electron spins can be separated from the space domain and spinpolarized electrons in semiconductors can be realized.Both the magnitude and sign of the spin polarization ratio change with the electron energy,in-plane wave vector,strain engineering and semiconductor layer thickness.The spin polarization ratio approaches a maximum at resonance;however,no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector.More importantly,the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness,giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.展开更多
Boron phosphide(BP)has gained significant research attention due to its unique photoelectric and mechanical properties.In this work,we investigated the stability of BP under high pressure using x-ray diffraction and s...Boron phosphide(BP)has gained significant research attention due to its unique photoelectric and mechanical properties.In this work,we investigated the stability of BP under high pressure using x-ray diffraction and scanning electron microscope.The phase diagram of BP was explored in both B-rich and P-rich environments,revealing crucial insight into its behavior at 5.0 GPa.Additionally,we measured the melting curve of BP from 8.0 GPa to 15.0 GPa.Our findings indicate that the stability of BP under high pressure is improved within B-rich and P-rich environments.Furthermore,we report a remarkable observation of melting curve frustration at 10.0 GPa.This study will enhance our understanding of stability of BP under high pressure,shedding light on its potential application in semiconductor,thermal,and light-transmitting devices.展开更多
Applying pressure has been evidenced as an effective method to control the properties of semiconductors,owing to its capability to modify the band configuration around Fermi energy.Correspondingly,structural evolution...Applying pressure has been evidenced as an effective method to control the properties of semiconductors,owing to its capability to modify the band configuration around Fermi energy.Correspondingly,structural evolutions under external pres-sures are required to analyze the mechanisms.Herein high-pressure structure of a magnetic doped semiconductor Ba(Zn_(0.95)Mn_(0.05))_(2)As_(2)is studied with combination of in-situ synchrotron X-ray diffractions and diamond anvil cells.The materials become ferromagnetic with Curie temperature of 105 K after further 20%K doping.The title material undergoes an isostruc-tural phase transition at around 19 GPa.Below the transition pressure,it is remarkable to find lengthening of Zn/Mn-As bond within Zn/MnAs layers,since chemical bonds are generally shortened with applying pressures.Accompanied with the bond stretch,interlayer As-As distances become shorter and the As-As dimers form after the phase transition.With further compres-sion,Zn/Mn-As bond becomes shortened due to the recovery of isotropic compression on the Zn/MnAs layers.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.62164005).
文摘Combining theory and computation,we explore the Goos–H¨anchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin–orbit coupling(SOC).GH displacement depends on electron spins thanks to Dresselhaus SOC,therefore electron spins can be separated from the space domain and spinpolarized electrons in semiconductors can be realized.Both the magnitude and sign of the spin polarization ratio change with the electron energy,in-plane wave vector,strain engineering and semiconductor layer thickness.The spin polarization ratio approaches a maximum at resonance;however,no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector.More importantly,the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness,giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.
基金Project supported by the National Natural Science Foundation of China (Grant No.12074273)the Sichuan Science and Technology Program (Grant No.2022NSFSC1810)。
文摘Boron phosphide(BP)has gained significant research attention due to its unique photoelectric and mechanical properties.In this work,we investigated the stability of BP under high pressure using x-ray diffraction and scanning electron microscope.The phase diagram of BP was explored in both B-rich and P-rich environments,revealing crucial insight into its behavior at 5.0 GPa.Additionally,we measured the melting curve of BP from 8.0 GPa to 15.0 GPa.Our findings indicate that the stability of BP under high pressure is improved within B-rich and P-rich environments.Furthermore,we report a remarkable observation of melting curve frustration at 10.0 GPa.This study will enhance our understanding of stability of BP under high pressure,shedding light on its potential application in semiconductor,thermal,and light-transmitting devices.
基金supported by Beijing Natural Science Foundation (No. 2212049)NSF of China (No. 11974407)+1 种基金CAS Project for Young Scientists in Basic Research (No. YSBR-030)the Youth Innovation Promotion Association of CAS (No. 2020007)
文摘Applying pressure has been evidenced as an effective method to control the properties of semiconductors,owing to its capability to modify the band configuration around Fermi energy.Correspondingly,structural evolutions under external pres-sures are required to analyze the mechanisms.Herein high-pressure structure of a magnetic doped semiconductor Ba(Zn_(0.95)Mn_(0.05))_(2)As_(2)is studied with combination of in-situ synchrotron X-ray diffractions and diamond anvil cells.The materials become ferromagnetic with Curie temperature of 105 K after further 20%K doping.The title material undergoes an isostruc-tural phase transition at around 19 GPa.Below the transition pressure,it is remarkable to find lengthening of Zn/Mn-As bond within Zn/MnAs layers,since chemical bonds are generally shortened with applying pressures.Accompanied with the bond stretch,interlayer As-As distances become shorter and the As-As dimers form after the phase transition.With further compres-sion,Zn/Mn-As bond becomes shortened due to the recovery of isotropic compression on the Zn/MnAs layers.