本文通过对肖特基势垒二极管不同温度下的电流电压(I-V)特性分析,将反向饱和电流(I_(0))、理想因子(n)及串联电阻(R_(S))三个参数与温度相关联,建立了肖特基二极管的SDD(symbolically-defined device)电热模型。为了验证模型的特性,将...本文通过对肖特基势垒二极管不同温度下的电流电压(I-V)特性分析,将反向饱和电流(I_(0))、理想因子(n)及串联电阻(R_(S))三个参数与温度相关联,建立了肖特基二极管的SDD(symbolically-defined device)电热模型。为了验证模型的特性,将所建模型应用于V波段的预失真线性化器加以验证。实测显示所建SDD模型相比于厂商所提供的spice(simulation program with integrated circuit emphasis)参数模型对于线性化器在不同温度下的幅度相位曲线具有更高的一致性。展开更多
Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-sec...Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-section(σ_(p))of H1 are determined to be 0.75 eV and 4.67×10^(−15)cm^(2),respectively.Distribution of apparent trap concentration in space charge region is demonstrated.Temperature-enhanced emission process is revealed by decrease of emission time constant.Electricfield-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission(PFE)model.In addition,H1 shows point defect capture properties and temperature-enhanced capture kinetics.Taking both hole capture and emission processes into account during laser beam incidence,H1 features a trap concentration of 2.67×10^(15)cm^(−3).The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.展开更多
A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion irradiation.We propose and verify that the generation of ...A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion irradiation.We propose and verify that the generation of stacking faults(SFs)induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results.The irradiation experiment was carried out based on Ta ions with high linear energy transfer(LET)of 90.5 MeV/(mg/cm^(2)).It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20%of the rated reverse voltage.Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes.We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation.Finally,three-dimensional(3D)TCAD simulation was employed to evaluate the excessive electron-hole pairs(EHPs)concentration excited by heavy ion irradiation.It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate.The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.展开更多
In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state throu...In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.展开更多
文摘本文通过对肖特基势垒二极管不同温度下的电流电压(I-V)特性分析,将反向饱和电流(I_(0))、理想因子(n)及串联电阻(R_(S))三个参数与温度相关联,建立了肖特基二极管的SDD(symbolically-defined device)电热模型。为了验证模型的特性,将所建模型应用于V波段的预失真线性化器加以验证。实测显示所建SDD模型相比于厂商所提供的spice(simulation program with integrated circuit emphasis)参数模型对于线性化器在不同温度下的幅度相位曲线具有更高的一致性。
基金supported by ShanghaiTech University Startup Fund 2017F0203-000-14the National Natural Science Foundation of China(Grant No.52131303)+1 种基金Natural Science Foundation of Shanghai(Grant No.22ZR1442300)in part by CAS Strategic Science and Technology Program(Grant No.XDA18000000).
文摘Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-section(σ_(p))of H1 are determined to be 0.75 eV and 4.67×10^(−15)cm^(2),respectively.Distribution of apparent trap concentration in space charge region is demonstrated.Temperature-enhanced emission process is revealed by decrease of emission time constant.Electricfield-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission(PFE)model.In addition,H1 shows point defect capture properties and temperature-enhanced capture kinetics.Taking both hole capture and emission processes into account during laser beam incidence,H1 features a trap concentration of 2.67×10^(15)cm^(−3).The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.
文摘A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion irradiation.We propose and verify that the generation of stacking faults(SFs)induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results.The irradiation experiment was carried out based on Ta ions with high linear energy transfer(LET)of 90.5 MeV/(mg/cm^(2)).It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20%of the rated reverse voltage.Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes.We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation.Finally,three-dimensional(3D)TCAD simulation was employed to evaluate the excessive electron-hole pairs(EHPs)concentration excited by heavy ion irradiation.It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate.The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.
基金supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400in part by the Youth Innovation Promotion Association of Chinese Academy Sciences (CAS)+4 种基金in part by the CAS-Croucher Funding Scheme under Grant CAS22801in part by National Natural Science Foundation of China under Grant 62334012, Grant 62074161, Grant 62004213, Grant U20A20208, and Grant 62304252in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018in part by the University of CASin part by the IMECAS-HKUST-Joint Laboratory of Microelectronics
文摘In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.
